Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Journal article (2018)

Authors

R. Sokolovskij Southern University of Science and Technology, Electronic Components, Technology and Materials - EEMCS , State Key Laboratory of Solid State Lighting
Jian Zhang Southern University of Science and Technology, Fudan University
E. Iervolino Southern University of Science and Technology
Changhui Zhao Southern University of Science and Technology
F. Santagata Electronic Components, Technology and Materials - EEMCS
F. Wang Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology
Hongyu Yu Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2018 R. Sokolovskij, Jian Zhang, E. Iervolino, Changhui Zhao, F. Santagata, F. Wang, Hongyu Yu, Pasqualina M Sarro, Kouchi Zhang
DOI: https://doi.org/10.1016/j.snb.2018.08.015
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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔIDS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H2S was 4.5x larger than to H2 and the device showed stable operation over an extended time period.

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