The red afterglow of current rare-earth-activated long persistent luminescence (LPL) phosphors is largely still less than 6 h, in contrast to the 20 or 30 h long blue- or green-emitting ones, becoming the main obstacle to realize their multiscenario applications in practice. Herein, we report a rare-earth-free red-emitting LPL phosphor SrGa₂O₄:Cu²⁺that can exhibit an afterglow at about 622 nm lasting over 30 h, which can largely match with the luminance of current blue- or green-emitting LPL phosphors. We find that the Cu²⁺ion could be charged by ultraviolet light from 280 to 420 nm, and the emission has a very broad band with a full width at half-maximum of about 150 nm. Combining the thermoluminescence measurement and the first-principles calculation, we find that the O vacancies and the -1 charged Ga vacancies could store the holes and contribute to the LPL of SrGa₂O₄:Cu²⁺. Our results may dramatically promote and expand its potential applications and stimulate the research of the multicolor LPL phosphors in future.

The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high temperature. With increasing recess depth, the threshold voltage ( VTH ) shifted from -1.57 to 1.49 V. A shallow recess (5 nm) resulted in a 1.03 mA increase in signal variation ( Δ IDS ), while a deep recess (15 nm) resulted in the highest sensing response ( S ) of 145.8% towards 300 ppm H2 as compared to reference sensors without gate recess. Transient measurements demonstrated reversible H2 response for all tested devices. The response and recovery time towards 250 ppm gradually decreased from 7.3 to 2.5 min and from 29.2 to 8.85 min going from 0 nm to 15 nm recess depth. The power consumption of the sensors reduced with increasing recess depth from 146.6 to 2.95 mW.

Digital etching is an effective method to lower dry etch damages in A1GaN/GaN HEMTs. This work systematically investigated O₂-plasma-based digital etching of AlGaN and p-GaN. AlN layers were used as the etch stop layers in the AlGaN etch. Important process aspects such as the use of the AlN layers, the RF power, the oxygen flow rate, the oxidation time and the resulting roughness were studied. These are technically relevant to obtain controllable, uniform etch surfaces with low surface damages for better HEMT performance.