In modern nano-scale lithography, an essential role of the source, the illumination, and projection lenses is to deliver the precise amount of energy at a specific wavelength to the photoresist deposited on a wafer surface during exposure. Unfortunately, the source of the most advanced lithography processes may produce unwanted infrared components passing through the illumination and projection lenses and reaching the wafer surface. These infrared residues can cause local heating resulting in deformation of the optical elements and the exposed wafer, thus causing deterioration of the image quality. Some infrared spectrum components are in the band from 2 µm to 12 µm. An infrared detector that can measure only these spectral components of the exposure beam, without being affected by the much more powerful exposure spectral component, is helpful for optics diagnostic purposes and improving imaging quality. In this paper, an ultra-thin uncooled integrable-on-chip linear array infrared detector to measure the band of 2-12 µm infrared radiation is designed and fabricated based on the photovoltaic multiple junction heterostructure from VIGO Photonics, made of a HgCdTe narrow bandgap semiconductor. Features such as zero bias, low noise, and fast response, together with a wide active window, make the detector unique for use in the mid-infrared band. Besides lithography applications, the new detector can be useful in testing, inspection, and equipment using infrared sources such as: He-Ne lasers (0.6 to 4 µm), STEAM lasers (2 to 200 µm), CO2 lasers (5 to 11 µm), InGaAsP lasers (0.8 to 3 µm), and PbSnTe (3 to 20 µm) and PbSnSe (7 to 40 µm) lasers.

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A clear understanding of the spectral components of an irradiated beam, or captured optical emission, is essential to optimize an optical system and increase its performance. Logically, for this purpose a grating-based spectrometer could be the first choice. However, in the case of a wide range spectrum, and for radiation with one dominant wavelength, this option may not work well. In this paper, we present a technique based on an array of bandpass detectors to measure accurately the power of a number of beam-specific spectral components in a wide spectrum range: from soft X-ray to infrared. The main unique features of this technique are: customization for specific wavelengths of interest; vacuum compatibility; and high sensitivity to low-energy spectral components in the presence of one or more dominant highpower spectral components.@en

Most of the studies on narrow-band near-infrared detection reported so far are related to the 1.3μm and 1.55μm spectral windows. There is insufficient research work done on radiation detection in the narrow band around 1 μm wavelength, which is just outside the Si (0.95μ m) and GaAs (0.85μ m) effective cut-off spectral sensitivity. This paper presents a p+n Ge-on-Si detector with a customized large active window, employing the PureGaB technology, to detect radiation in a very narrow band around 1μ m. The advantages of the proposed detector are: (1) CMOS-compatibility and micro-spectroscopic capability; (2) low dark current and high photoresponsivity, compared to similar devices reported in the literature; (3) enhanced sensitivity to weak radiation by realizing an ultra-shallow and very thin depletion region. These detectors can be good candidates for measuring the YAG laser radiation and measuring stray radiation in photolithography.

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We present an extremely compact field effect transistor (FET)-based electrochemical sensor for in situ real-time and label-free measurement of ion concentrations in the cell culture area of organs-on-chip (OoCs) devices. This sensor replaces the functionality of an external reference electrode, crucial in standard electrochemical sensing, by controlling the FET threshold voltage via a capacitive control gate. The silicon- and polymer-based charge sensor can be integrated in OoC platforms by means of a wafer-scale and CMOS-compatible microfabrication process. This fabrication approach inherently allows a superior level of accuracy, repeatability and scalability compared to common OoC manufacturing methods. The sensor combines in a single device the complementary benefits of silicon-based electronics and of flexible polymer membranes with integrated microelectrodes – congenial substrates to sustain dynamic stimuli and mimic physiological tissue microenvironments. The integration of the polymer membrane in the sensing region makes this miniature sensor a preferable option for high sensitivity biochemical measurements in OoC applications, including monitoring the pH of cell culture media and of tissue culturing microenvironments, quantification of ion displacement in cells, and complementary research on disease modeling.@en

Monitoring cell conditions and microenvironment in real time is crucial for Organ-on-Chip (OoC) functionality. In particular, biological cues such as ions, including metals and metabolites, play a critical role in physiology and homeostasis in the human body. • Real-time monitoring of ions without optical systems is an unmet need for OOCs [1]. • Electrochemical sensors, such as organic electrochemical [2] and thin-film transistors [3], may address this need. Most of these sensors however rely on reference electrodes.@en