Large format arrays of transition edge sensor (TES) are crucial for the next generation of X-ray space observatories. Such arrays are required to achieve an energy resolution of Δ E < 3 eV full-width-half-maximum (FWHM) in the soft X-ray energy range. We are currently developing X-ray microcalorimeter arrays as a backup option for the X-IFU instrument on board of ATHENA space telescope, led by ESA and foreseen to be launched in 2031. In this contribution, we report on the development and the characterization of a uniform 32 × 32 pixel array with (length × width) 140 × 30 μ m2 TiAu TESs, which have a 2.3 μ m thick Au absorber for X-ray photons. The pixels have a typical normal resistance Rn = 121 m Ω and a critical temperature Tc ∼ 90 mK. We performed extensive measurements on 60 pixels out of the array in order to show the uniformity of the array. We obtained an energy resolutions between 2.4 and 2.6 eV (FWHM) at 5.9 keV, measured in a single-pixel mode at AC bias frequencies ranging from 1 to 5 MHz, with a frequency domain multiplexing (FDM) readout system, which is developed at SRON/VTT. We also present the detector energy resolution at X-ray with different photon energies generated by a modulated external X-ray source from 1.45 keV up to 8.9 keV. Multiplexing readout across several pixels has also been performed to evaluate the impact of the thermal crosstalk to the instrument's energy resolution budget requirement. This value results in a derived requirement, for the first neighbour, that is less than 1;× 10-3 when considering the ratio between the amplitude of the crosstalk signal to an X-ray pulse (for example at 5.9 keV).

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This paper presents the fabrication and electrical characterization of superconducting high-aspect ratio through-silicon vias DC-sputtered with aluminum. Fully conformal and void-free coating of 300 μm-deep and 50 μmwide vias with Al, a CMOS-compatible and widely available superconductor, was made possible by tailoring a funneled sidewall profile for the axisymmetric vias. Single-via electric resistance as low as 80.44 mΩ at room temperature and superconductivity below 1.28 K were measured by a crossbridge Kelvin resistor structure. This work thus demonstrates the fabrication of functional superconducting interposer layers, suitable for high-density 3D integration of silicon-based quantum computing architectures.@en