InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices

Journal article (2017)

Authors

Diana Car Car Eindhoven University of Technology
S. Conesa Boj QN/Conesa-Boj Lab - AS
M.T. Wimmer ALG/General - QuTech Advanced Research Centre
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi Taniguchi National Institute for Materials Science
Leo P. Kouwenhoven QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
E.P.A.M. Bakkers Eindhoven University of Technology, QN/Bakkers Lab
H. Zhang QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
R.L.M. op het Veld QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
M.W.A. de Moor QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
E.M.T. Fadaly QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
Önder Gül QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
Sebastian Kölling Koelling Eindhoven University of Technology
V. Toresen QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
Research Group
QN/Conesa-Boj Lab (AS) (TU Delft)
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Published Date

08-02-2017

Language

English

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Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Conesa-Boj Lab

Abstract

Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB) fits to the experimental I-V traces.

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