The chemical-mechanical relationship of the SiOC(H) dielectric film

Conference paper (2007)

Authors

C.A. Yuan Computational Design and Mechanics - Mechanical, Maritime and Materials Engineering
O van der Sluis Computational Design and Mechanics - Mechanical, Maritime and Materials Engineering
Kouchi Zhang Dynamics of Micro and Nano Systems - Mechanical, Maritime and Materials Engineering
L.J. Ernst Computational Design and Mechanics - Mechanical, Maritime and Materials Engineering
W.D. van Driel Dynamics of Micro and Nano Systems - Mechanical, Maritime and Materials Engineering
RBR van Silfhout External organisation
B.J. Thijsse OLD Virtual Materials and Mechanics
Research Group
Computational Design and Mechanics (Mechanical, Maritime and Materials Engineering) (TU Delft)
More Info
expand_more

Published Date

2007

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Mechanical, Maritime and Materials Engineering

Department

Precision and Microsystems Engineering

Research Group

Computational Design and Mechanics

Abstract

We propose an atomic simulation technique to understand the chemical-mechanical relationship of amorphous/porous silica based low-dielectric (low-k) material (SiOC(H)). The mechanical stiffness of the low-k material is a critical issue for the reliability performance of the IC backend structures. Due to the amorphous nature of the low-k material which has till now unknown molecular structure, a novel algorithm is required to generate the molecular structure. The molecular dynamics (MD) method is used as the simulation tool. Moreover, to understand the variation of the mechanical stiffness and density by the chemical configuration, sensitivity analyses have been performed. A fitting equation based on homogenization theory is established to represent the MD simulation results. The trends which are indicated by the simulation results exhibit good agreements with experiments from literature. Moreover, the simulation results indicate that the slight variation of the chemical configuration can induce significant change of the mechanical stiffness (over 80%) but not the density.