Façade building-integrated photovoltaics is a technology that transforms a passive façade into a distributed, renewable electrical generator by the inclusion of solar cells in the building envelope. Partial shading due to nearby objects is a typical problem for façade building-integrated photovoltaics as it strongly reduces the output power of the installation. Distributed maximum power point tracking by means of embedded converters and a common direct current bus has been proposed to alleviate this issue. However, the bus voltage plays an important role in converter topology selection and overall efficiency, although this is not being covered in literature. Also the influence of the solar cell technology on the output voltage of the module is not studied before, although it strongly influences the converter topology selection and the losses. In this paper, a methodology is described to investigate the influence of the voltage level and solar cell technology by taking conversion losses in the converters and the cabling into account. The methodology is applied to two case study buildings for which four different cell technologies are considered. It is shown that overall high efficiencies are obtained, regardless of the voltage level. However, the loss distribution changes significantly with the voltage. This aspect can be used advantageously to reduce thermal stresses on the embedded converter. Furthermore, the overall system efficiency is typically higher when the voltage step-up is lower.

Reducing the absorber layer thickness below 1 μm for a regular copper indium gallium di-selenide (CIGS) solar cell lowers the minimum quality requirements for the absorber layer due to shorter electron diffusion length. Additionally, it reduces material costs and production time. Yet, having such a thin absorber reduces the cell efficiency significantly. This is due to incomplete light absorption and high Molybdenum/CIGS rear-surface recombination [1]. The aim of this research is to implement some innovative rear surface modifications on a 430 nm thick CIGS absorber layer to reduce both these affects: an aluminium oxide passivation layer to reduce the back-surface recombination and point contact openings using nano-particles for electrical contact. The impact of the implementation of all these rear-surface modifications on the opto-electrical properties of the CIGS solar cell will be discussed and analyzed in this paper.

This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se₂ (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (V_OC), 1 mA cm⁻² in short-circuit current density (J_SC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).