Surface Passivation of CIGS Solar Cells Using Gallium Oxide

Journal article (2018)

Authors

Siddhartha Garud Institute for Solar Fuels, IMEC-Solliance
Nikhil Gampa Institute for Solar Fuels
Thomas G. Allen King Abdullah University of Science and Technology, Australian National University
Ratan Kotipalli Université Catholique de Louvain
Denis Flandre Université Catholique de Louvain
Maria Batuk Universiteit Antwerpen
Joke Hadermann Universiteit Antwerpen
Marc Meuris Katholieke Universiteit Leuven, Campus Diepenbeek
Arno H.M. Smets Photovoltaic Materials and Devices
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Research Group
Photovoltaic Materials and Devices
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Published Date

2018

Language

English

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Research Group

Photovoltaic Materials and Devices

Abstract

This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

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