X. Chen
14 records found
1
Authored
Using TCAD simulations, the silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET) is systematically investigated in this paper. The doping concentration (N ...
IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste u ...
Sensitive materials for formaldehyde (HCHO) sensor need high sensitivity and selectivity. The research on two dimensional (2D) sensitive material is growing, and most studies focus on the pristine or modified graphene. So it is essential to introduce other 2D materials into HC ...
SnS monolayer has sparked intensive attention due to its unique electronic and optical properties. We systemically investigate the electronic properties of SnS by first-principles calculation. Our results show that the monolayer possesses indirect bandgap. We further perform m ...
Nitrogen Dioxide Gas Sensor Based on Monolayer SnS
A First-Principle Study
The sensing behavior of monolayer tin sulfide (SnS) for four gas molecules (NH3, NO2, CO, and H2O) are studied by the first-principle calculation based on density-functional theory. We calculate adsorption energy, adsorption distance, and Hirsh ...