Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS

Conference paper (2019)

Authors

J. van Staveren OLD QCD/Charbon Lab
Giordano Scappucci QCD/Scappucci Lab
Menno Veldhorst QCD/Veldhorst Lab
Masoud Babaie Electronics
Edoardo Charbon (OLD)Applied Quantum Architectures, Intel Labs, École Polytechnique Fédérale de Lausanne, OLD QCD/Charbon Lab
Fabio Sebastiano (OLD)Applied Quantum Architectures
Research Group
Computer Engineering
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Published Date

01-09-2019

Language

English

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Research Group

Computer Engineering

Abstract

This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS,NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate,for the first time,the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits,thus enabling the use of the proposed references in harsh environments,such as in space and quantum-computing applications.

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