Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

Journal article (2015)

Authors

K. Nishiguchi External organisation
A Castellanos-Gomez External organisation
H Yamaguchi External organisation
A Fujiwara External organisation
Herre van der Zant QN/Mol. Electronics & Devices
G. A. Steele QN/Quantum Transport, QN/Mol. Electronics & Devices
Research Group
QN/Mol. Electronics & Devices
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Published Date

2015

Language

English

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Research Group

QN/Mol. Electronics & Devices

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