Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

Journal article (2016)

Authors

R. Sokolovskij Electronic Components, Technology and Materials - EEMCS , Beijing Delft Institute of Intelligent Science and Technology
J. Sun Sun Beijing Research Center
F. Santagata Peking University, Guangdong Dongguan Quality Supervision Testing Center
E. Iervolino Peking University, Guangdong Dongguan Quality Supervision Testing Center
S. Li Li Peking University
G.Y. Zhang Peking University
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2016 R. Sokolovskij, J. Sun, F. Santagata, E. Iervolino, S. Li, G.Y. Zhang, Pasqualina M Sarro, Kouchi Zhang
DOI: https://doi.org/10.1016/j.proeng.2016.11.350
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Published Date

2016

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O2 plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very slow etching rate (∼0.38nm/cycle), limited by oxidation depth. The proposed approach allows fine control of the oxidation enabling the formation of accurately controlled recess of very thin (20∼30nm) barrier layers. With optimized power settings, etch rates from ∼0.6 to ∼11nm/cycle were obtained. AFM results did not show any increase in surface roughness after etching, indicating that surface quality of the etched layer was not affected by the etching process.