This paper presents a digitally controlled frequency generator for dual frequency-band radar system that is optimized for 16 nm FinFET CMOS. It is based on a 21% wide tuning range,fine-resolution DCO with only switchable metal capacitors. A third-harmonic boosting DCO simultaneously generates 22.5-28 GHz and sufficiently strong 68-84 GHz signals to satisfy short-range radar (SRR) and medium/long range radar (M/LRR) requirements. The 20.2 mW DCO emits -97 dBc/Hz at 1 MHz offset from 77 GHz,while fully satisfying metal density rules. It occupies 0.07 mm²,thus demonstrating both 43% power and 47% area reductions. The phase noise and FoM_T (figure-of-merit with tuning range) are improved by 1.8 dB and 0.2 dB,respectively,compared to state-of-the-art.

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We propose a time-predictive architecture of an all-digital PLL (ADPLL) for cellular radios, which is optimized for advanced CMOS. It is based on a 1/8-length time-to-digital converter (TDC) of stabilized 7-ps resolution, as well as wide tuning range, and fine-resolution class-F digitally controlled oscillator (DCO) with only switchable metal capacitors. The 0.4-mW TDC clocked at 40 MHz maintains 7-ps resolution for <-107 dBc/Hz in-band phase noise while the 7.3-mW DCO emits -157 dBc/Hz at 20 MHz offset at 2 GHz. Reference spurs are <-91 dBc, while fractional spurs are <-55 dBc. The ADPLL supports a 2-point modulation and consumes 11.5-mW while occupying 0.22 mm$^2$. @en

In this paper, we investigate an impact of voltage supply scaling on power consumption and performance of a new class of wireless receivers (RX) for Internet-of-Things (IoT) applications: a discrete-time (DT) superheterodyne architecture realized in nanoscale CMOS using inverter-based gm and switched capacitors. The power supply is partitioned into three separate domains: RF, intermediate frequency (IF) processing, and clocking, which allows them to be independently regulated to assess their respective impact. The DT-RX maintains its functionality, albeit with some acceptable loss of performance, when the core supplies are varied by as much as an octave, i.e., from the nominal 1.1 V down to 0.55V. The DT-RX IC is then connected to a switched-capacitor based voltage doubler array on a companion IC die such that the DT-RX can be powered at the octave range of 0.275-0.55 V from an energy harvester. The sensitivity at the doubler's 0.275/0.55 V input is -85/-95 dBm while consuming 1.0/2.4mW. Both ICs are implemented in TSMC 28-nm LP CMOS.

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Energy harvesting (EH) is a topic of intensive research promising battery-free operation of massive networks of wireless IoT devices. To simultaneously satisfy the EH and IoT, ultra-low-power (ULP) consumption with ultra-low-voltage (ULV) supply are required. Some, e.g., photovoltaic, EH output voltage (<0.3V) is below the threshold voltage (V_t) of even the most recent FinFET CMOS transistors, which makes it extremely challenging for circuit designers. Thus, new special circuit techniques are needed to make the IoT devices work properly with supplies below V_t.

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