Bifacial (BF) copper-plated crystalline silicon solar cell is an attractive topic to concurrently reduce silver consumption and maintain good device performance. However, it is still challenging to realize a high aspect ratio (AR) of the metal fingers. Herein, a new type of hybrid-shaped Cu finger is electromagnetically fabricated in a BF plating process. Cyclic voltammetry is employed to disclose the electrochemical behaviors of cupric ions in monofacial and simultaneous BF Cu-plating processes, such that the controllability of the plating process could be assessed. The optimal hybrid Cu finger is composed of a rectangular bottom part and a round top part, such that an utmost effective AR value of 1.73 is reached. In BF Cu-plating, two sub-three-electrode electrochemical cells are employed to realize equal metal finger heights on both sides of the wafer. Compared to our low thermal-budget screen-printing metallization, the Cu-plated silicon heterojunction devices show both optical and electrical advantages (based on lab-scale tests). The champion BF Cu-plated device shows a front-side efficiency of 22.1% and a bifaciality factor of 0.99.

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Reducing indium consumption, which is related to the transparent conductive oxide (TCO) use, is a key challenge for scaling up silicon heterojunction (SHJ) solar cell technology to terawatt level. In this work, we developed bifacial SHJ solar cells with reduced TCO thickness. We present three types of In₂O₃-based TCOs, tin-, fluorine-, and tungsten-doped In₂O₃ (ITO, IFO, and IWO), whose thickness has been optimally minimized. These are promising TCOs, respectively, from post-transition metal doping, anionic doping, and transition metal doping and exhibit different opto-electrical properties. We performed optical simulations and electrical investigations with varied TCO thicknesses. The results indicate that (i) reducing TCO thickness could yield larger current in both monofacial and bifacial SHJ devices; (ii) our IWO and IFO are favorable for n-contact and p-contact, respectively; and (iii) our ITO could serve well for both n-contact and p-contact. Interestingly, for the p-contact, with the ITO thickness reducing from 75 nm to 25 nm, the average contact resistivity values show a decreasing trend from 390 mΩ cm² to 114 mΩ cm². With applying 25-nm-thick front IWO in n-contact, and 25-nm-thick rear ITO use in p-contact, we obtained front side efficiencies above 22% in bifacial SHJ solar cells. This represents a 67% TCO reduction with respect to a reference bifacial solar cell with 75-nm-thick TCO on both sides.

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The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and back contacts. Here, we optimized tungsten-doped indium oxide (IWO) film deposited by radio frequency magnetron sputtering at room temperature. The opto-electrical properties of the IWO were manipulated when deposited on top of thin-film silicon layers. The optimal IWO on glass shows carrier density and mobility of 2.1 × 1020 cm−3 and 34 cm2 V−1s−1, respectively, which were tuned to 2.0 × 1020 cm−3 and 47 cm2 V−1s−1, as well as 1.9 × 1020 cm−3 and 42 cm2 V−1s−1, after treated on i/n/glass and i/p/glass substrates, respectively. Using the more realistic TCO data that were obtained on thin-film silicon stacks, optical simulation indicates a promising visible-to-near-infrared optical response in IWO-based SHJ device structure, which was demonstrated in fabricated devices. Additionally, by adding an additional magnesium fluoride layer on device, the champion IWO-based SHJ device showed an active area cell efficiency of 22.92%, which is an absolute 0.98% efficiency gain compared to the ITO counterpart, mainly due to its current gain of 1.48 mA/cm2.@en

In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultrathin SiOx/poly-Si, the appropriate implementation of transparent conductive oxide (TCO) layers is of vital importance. Considerable deterioration in passivation quality occurs for thin poly-Si-based devices owing to the sputtering damage during TCO deposition. Curing treatment at temperatures above 350 °C can recover such degradation, whereas the opto-electrical properties of the TCO are affected as well, and the carrier transport at the poly-Si/TCO contact is widely reported to degrade severely in such a procedure. Here, we propose straightforward approaches, post-deposition annealing at 400 °C in nitrogen, hydrogen, or air ambience, are proposed to tailor material properties of high-mobility hydrogenated fluorine-doped indium oxide (IFO:H) film. Structural, morphological, and opto-electrical properties of the IFO:H films are investigated as well as their inherent electron scattering and doping mechanisms. Hydrogen annealing treatment proves to be the most promising strategy. The resulting layer exhibits both optimal opto-electrical properties (carrier density = 1.5 × 1020 cm-3, electron mobility = 108 cm2 V-1 s-1, and resistivity = 3.9 × 10-4 ω cm) and remarkably low contact resistivities (∼20 mω cm2 for both n- and p-contacts) in poly-Si solar cells. Even though the presented cells are limited by the metallization step, the obtained IFO:H-base solar cell show an efficiency improvement from 20.1 to 20.6% after specific hydrogen treatment, demonstrating the potential of material manipulation and contact engineering strategy in high-efficiency photovoltaic devices endowed with TCOs.

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Perovskite/silicon tandem solar cells have reached certified efficiencies of 28% (on 1 cm² by Oxford PV) in just about 4 years, mostly driven by the optimized design in the perovskite top cell and crystalline silicon (c-Si) bottom cell. In this review, we focus on the structural adjustment of the bottom cell based on the structural evolution of monolithic perovskite/silicon tandem solar cells to improve their performance. To begin with, c-Si solar cells are classified into silicon homojunction and silicon heterojunction (SHJ) devices according to temperature tolerance, and the corresponding structural features are presented. Then, the evolution of monolithic perovskite/silicon tandem cells based on c-Si homojunction and heterojunction bottom devices is summarized. An appropriate candidate of the c-Si bottom cell for monolithic perovskite/silicon tandem cells is proposed, mainly including passivated emitter and rear cell devices, the tunnel oxide passivated contact cell, and SHJ devices. In brief, our review will emphasize the important role of the c-Si bottom cell with different passivation structures for perovskite/silicon tandem cells, which provides a guidance to enhance the performance of tandem cells.

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Photoelectrochemical (PEC) devices for solar water splitting require not only high solar to hydrogen conversion efficiency but also high chemical stability in strong acidic or alkaline electrolytes for long-term operation. Titanium dioxide (TiO₂) has been considered as a highly promising protection layer to achieve high chemical stability for solar water splitting devices, especially for silicon based monolithic photovoltaic electrochemical (PV-EC) systems, while there is a trade-off relationship between activity and stability in these devices: the high charge transport barrier at the PV (silicon based thin film solar cells)/TiO₂ interface and the high ohmic loss in TiO₂ films hinder the device performance, especially when a thick TiO₂ protection layer (preferred to enhance the chemical stability in the electrolyte) is used. Herein, we show that a hydrogen doped TiO₂ protection layer can break this traditional trend to increase the activity without deteriorating the stability, when thick protection layers are employed to ensure stability. We demonstrated significant performance enhancement in hydrogenated amorphous silicon/silicon germanium (a-Si:H/a-SiGe:H) photocathodes through this approach. On one hand, the H-doping can shift up the Fermi level and reduce the electron transport barrier at the interface of the PV/TiO₂ protection layer. On the other hand, the higher carrier density via H-doping leads to the enhancement of electron transport in TiO₂ films and a shorter depletion layer barrier. Thus, the H-doping results in a higher photocurrent output at 0 V vs. reversible hydrogen electrode (RHE), indicating the high potential of the H-doped TiO₂ protection layer for achieving stable and efficient monolithic solar water splitting devices.

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