For the relevant properties of pristine and doped (Si, P, Se, Te, As) monolayer WS₂ before and after the adsorption of CO, CO₂, N₂, NO, NO₂ and O₂, density functional theory (DFT) calculations are made. Calculation results reveal that the monolayer WS₂ doped with P and As atoms can be substrate materials for NO and NO₂ gas sensors. However, after the subsequent CDD and ELF calculations, it is found that P-doped monolayer WS₂ adsorbs NO and NO₂ in a chemical way, while As-doped monolayer WS₂ adsorbs NO and NO₂ in a physical way. Also, the charge transfer between As-doped monolayer WS₂ and NO is relatively small and not easily detected. Besides, As-doped monolayer WS₂ system exhibits greater differences in optical properties (the imaginary part of reflectivity and dielectric function) before and after the adsorption of NO₂ gas than before and after adsorption of NO gas. These differences in optical properties assist sensor devices in making gas adsorption-related judgments. Through the analysis of the recovery time, DOS and PDOS, As-doped monolayer WS₂ is also verified to be a promising NO₂ sensing material, whose recovery time is calculated to be as short as 0.169 ms at 300 K.

The development of high-performance gas sensing materials is one of the development trends of new gas sensor technology. In this work, in order to predict the gas-sensitive characteristics of HfSe₂ and its potential as a gas-sensitive material, the interactions of nonmetallic element (O, S, Te) doped HfSe₂ monolayer and small molecules (NH₃ and O₃) have been studied by first-principles based on density functional theory. The results show that the adsorption of NH₃ and O₃ on pristine HfSe₂ monolayer is weak, and the adsorption strength can be significantly improved by doping O. And O-HfSe₂ is chemical adsorption to O₃ with large adsorption energy and transfer charge, and the band gap of O[sbnd]HfSe₂ disappears after adsorbing O₃, indicating that the adsorption of O₃ has a significant effect on the electrical properties of the substrate. These mean that O₃ is difficult to recover from the substrate surface, thus preventing O-HfSe₂ from developing into a sensitive material for O₃ detection. After doping S, the charge transfers and adsorption strength to NH₃ are the largest, but it is still small. So, the strain effect on the S-HfSe₂/NH₃ adsorption system is also studied. The results indicate that the adsorption strength of S-HfSe₂ to NH₃ can be enhanced by stretching S-HfSe₂ along x-axis. After absorbing NH₃, the conductivity of x-axis strained S-HfSe₂ changes, which suggest its sensitivity. And the predicted recovery times of S-HfSe₂ surfaces with ε_x=4%, 6% and 8% are 0.027 s, 1.153 s and 102.467 s, respectively, which suggests that the S-HfSe₂ monolayer has the potential to be developed as a sensitive material for NH₃ detection. These adsorption mechanism studies can also serve as a theoretical foundation for the experimental design of gas-sensing materials.