Capacitive micromachined ultrasonic transducers (CMUTs) offer several advantages over standard lead zirconate titanate (PZT) transducers, particularly for implantable devices. To eliminate their typical need for an external bias voltage, we embedded a charge storage layer in the dielectric. The objective of this study was to evaluate the performance of plasma-enhanced chemical vapor deposition (PECVD) Si3N4 and atomic layer deposition (ALD) Al2O3 as materials for the charge storage layer and two different dielectric layer thicknesses, focusing on their application as receivers in a wireless power transfer link. Capacitance-voltage (CV) measurements revealed that Si3N4 has a higher charge storage capacity compared to Al2O3. Additionally, a thicker dielectric layer between the bottom electrode and the charge storage layer (Bdiel) improved both charge trapping and retention, as assessed in dynamic accelerated lifetime transmit (TX)-mode tests. We then analyzed the power conversion performance of the fabricated CMUTs through both simulations and experiments. We performed extensive modeling based on an equivalent circuit derived from electrical impedance measurements of the fabricated CMUTs. The model was used to predict the power conversion efficiency under various conditions, including the charging field strength, the operating frequency, and parasitic series resistance. Power transfer experiments at 1- and 2.4-MHz recorded efficiencies exceeding 80% with an optimally matched load and up to 54% with a purely resistive load. Results confirmed that, with optimal load matching, the efficiency of different CMUT variants is comparable, indicating that the optimal variant should be selected based on additional criteria, such as charge retention time.

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Capacitive Micromachined Ultrasound Transducers (CMUTs) have many advantages compared to other ultrasonic transducer technologies, especially for implantable devices. However, they require a high bias voltage for efficient operation. To eliminate the need for an external bias voltage, a charge storage layer can be embedded in the dielectric. This study aims to compare the performance of Si 3 N 4 and Al 2 O 3 when used as a charge storage layer. By measuring the shift in the C-V curve, Si 3 N 4 exhibits a larger shift than Al 2 O 3 , indicating a better charge-trapping capability. When using the pre-charged CMUTs as power receivers, the Si 3 N 4 version harvested up to 80 mW -only a few mW more than the Al 2 O 3 - with an efficiency of about 50 %. Accelerated Lifetime Tests predict a lifetime of about 7.8 and 1.2 years for Si 3 N 4 and Al 2 O 3 respectively.@en

Recently various porous organic frameworks (POFs, crystalline or amorphous materials) have been discovered, and used for a wide range of applications, including molecular separations and catalysis. Silicon nanowires (SiNWs) have been extensively studied for diverse applications, including as transistors, solar cells, lithium ion batteries and sensors. Here we demonstrate the functionalization of SiNW surfaces with POFs and explore its effect on the electrical sensing properties of SiNW-based devices. The surface modification by POFs was easily achieved by polycondensation on amine-modified SiNWs. Platinum nanoparticles were formed in these POFs by impregnation with chloroplatinic acid followed by chemical reduction. The final hybrid system showed highly enhanced sensitivity for methanol vapour detection. We envisage that the integration of SiNWs with POF selector layers, loaded with different metal nanoparticles will open up new avenues, not only in chemical and biosensing, but also in separations and catalysis.

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In this work we present the effect of defects in graphene on its potential for application in flexible electronics. We visualize defects at the grain boundaries, transfer defects and local atomic defects. We show that these defects are currently determining the gas barrier properties of graphene. Under strain up to only 2% we show that these defects lead to cracks in the graphene thereby deteriorating its conductivity.@en