This study aims to evaluate the effectiveness of Ultrasonic-assisted drilling (UAD) of Glass laminate aluminium reinforced epoxy (GLARE) at high cutting speeds (Spindle speeds: 3000–7500 rpm; feed rates 300–750 mm/min) by analysing the thrust force and hole quality metrics (surface roughness, hole size, and burr formations. The research also presents numerical modelling of FMLs under conventional and UAD regimes to predict thrust force using ABAQUS/SIMULIA. The thrust force and exit burrs were reduced by up to 40.83 % and 80 %, respectively. The surface roughness metrics (R_a and R_z) were slightly higher using UAD but remained within the desirable limits of surface roughness for machined aeronautical structures. The discrepancy between the simulation and experimental results was adequate and did not exceed 15 %. The current study shows that it is feasible to drill holes in GLARE using higher cutting parameters and maintain excellent hole quality, which means increased productivity and reduced costs.

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The optical and electrical properties of Si rich SiC (SRSC) solar cell absorber layers will strongly depend on interfacial layers between the Si and the SiC matrix and in this work, we analyze hitherto undiscovered interfacial layers. The SRSC thin films were deposited using a plasma-enhanced chemical vapor deposition (PECVD) technique and annealed in a nitrogen environment at 1100 °C. The thermal treatment leads to metastable SRSC films spinodally decomposed into a Si–SiC nanocomposite. After the thermal treatment, the coexistence of crystalline Si and SiC nanostructures was analysed by high resolution transmission electron microscopy (HRTEM) and electron diffraction. From the quantitative extraction of the different plasmon signals from electron energy-loss spectra, an additional structure, amorphous SiC (a-SiC) was found. Quantitative spectroscopic electron tomography was developed to obtain three dimensional (3D) plasmonic maps. In these 3D spectroscopic maps, the Si regions appear as network structures inside the SiC matrix where the a-SiC appears as an interfacial layer separating the matrix and Si network. The presence of the a-SiC interface can be explained in the framework of the nucleation and growth model.@en

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.@en

This paper studies the identification of ARMA systems with colored measurement noises using finite-level quantized observations. Compared with the case under colorless noises, this problem is more challenging. Our approach is to jointly design an adaptive quantizer and a recursive estimator to identify system parameters. Specifically, the quantizer uses the latest estimate to adjust its thresholds, and the estimator is updated by using quantized observations. To accommodate the temporal correlations of quantization errors and measurement noises, we construct a second-order statistics equivalent system, from which the original ARMA system is identified. The associated identifiability problem and convergence are analyzed as well. Finally, numerical simulations are performed to demonstrate the effectiveness of the proposed algorithm.@en

We propose a method, with minimal bias caused by user input, to quickly detect and measure the nanocrystal size distribution from transmission electron microscopy (TEM) images using a combination of Laplacian of Gaussian filters and non-maximum suppression. We demonstrate the proposed method on bright-field TEM images of an a-SiC:H sample containing embedded silicon nanocrystals with varying magnifications and we compare the accuracy and speed with size distributions obtained by manual measurements, a thresholding method and PEBBLES. Finally, we analytically consider the error induced by slicing nanocrystals during TEM sample preparation on the measured nanocrystal size distribution and formulate an equation to correct this effect.@en