Hafnia-based thin films exhibit unconventional ferroelectricity. These materials also show rich polymorphism, and thus temperature and field-driven phase transitions, as well as oxygen migration. In a bigger context of exploring the synergy between ferroelectricity and diffusion-based structural phenomena, here we study temperature-dependent phase transitions in epitaxial Hf0.5Zr0.5O2(HZO)/La0.67Sr0.33MnO3 (LSMO, bottom electrode) heterostructures. We report topotactic phase transitions and their clear pathways in both LSMO and HZO layers upon heating under vacuum, using in situ scanning transmission electron microscopy (STEM). Specifically, we directly image oxygen and cationic columns using integrated differential phase contrast STEM and follow their evolution with temperature. We also perform in situ high temperature X-ray diffraction in air and show that the LSMO layer undergoes reversible thermal expansion and contraction when heated up to 850 °C, whereas HZO undergoes strain relaxation beyond 750 °C without any reversible phase transition. Our results provide a comprehensive and direct understanding of temperature-dependent structure, defect, and property correlations in these systems.

@en

The peculiar optical patterns observed in Mg2NiHx films during hydrogenation with their applicability as selective tunable absorbers were discussed. These films showed large change in reflection that yielded very low reflectance at different hydrogen contents. It was shown that these films are suitable as smart coatings due to their energy tunability, high reflectance contrast, and switching capabilities. It was observed that these films can be used as a switchable solar absorber in solar collectors as the film in this state emits only 16% of the 100°C blackbody radiation. It was found that.@en

Thin films of Mg₂NiH_x which exhibit a remarkable black state with low reflection over the entire visible spectrum were investigated. The films show zero transmission and a low electrical resistivity. It was shown that such a black state is not explicable for a homogeneous layer. The results show that a large absorption coefficient yields substantial reflection.

@en