Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts

Journal article (2016)

Authors

F. Qu Kavli institute of nanoscience Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre
J. van Veen QuTech Advanced Research Centre, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , Kavli institute of nanoscience Delft
F.K. de Vries QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
A.J.A. Beukman QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre, Kavli institute of nanoscience Delft
M Wimmer Kavli institute of nanoscience Delft, (OLD) Chair of Relation to Practice ur , QuTech Advanced Research Centre
Wei Yi HRL Laboratories
Andrey A. Kiselev HRL Laboratories
Binh Minh Nguyen HRL Laboratories
Leo P. Kouwenhoven QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
More Authors... External organisation
Research Group
QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)
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Published Date

2016

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

Because of a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1| = 26) and out-of-plane (|g1| = 52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.