Tunneling spectroscopy of localized states of WS2 barriers in vertical van der Waals heterostructures

Journal article (2020)

Authors

N. Papadopoulos Kavli institute of nanoscience Delft, QRD/Goswami Lab - QuTech Advanced Research Centre
P. Gehring Kavli institute of nanoscience Delft, QN/van der Zant Lab - AS
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi National Institute for Materials Science
H.S.J. van der Zant QN/van der Zant Lab - AS , Kavli institute of nanoscience Delft
G.A. Steele Kavli institute of nanoscience Delft, QN/Steele Lab - AS
Research Group
QRD/Goswami Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2020 N. Papadopoulos, P. Gehring, Kenji Watanabe, Takashi Taniguchi, H.S.J. van der Zant, G.A. Steele
DOI: https://doi.org/10.1103/PhysRevB.101.165303
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Published Date

2020

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Goswami Lab

Abstract

In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here we study localized states in WS2 and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/ WS2/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Applying a perpendicular magnetic field, we observe a shift in the energies of the quantum levels and information about the orbital magnetic moment of the localized states is extracted.

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