Strong doping reduction on wafer-scale CVD graphene devices via Al2O3 ALD encapsulation

Journal article (2024)

Authors

K. Dockx EKL-Users - EEMCS , QN/Kavli Nanolab Delft - AS
M.D. Barnes QN/Kavli Nanolab Delft - AS , EKL-Users - EEMCS
D. Wehenkel EKL-Users - EEMCS , QN/Kavli Nanolab Delft - AS
R van Rijn Old - EWI Sect. ECTM
H.S.J. van der Zant QN/van der Zant Lab - AS
M. Buscema QN/Kavli Nanolab Delft - AS
Research Group
EKL-Users (EEMCS) (TU Delft)
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Published Date

2024

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Else Kooi Laboratory

Research Group

EKL-Users

Abstract

We present the electrical characterization of wafer-scale graphene devices fabricated with an industrially-relevant, contact-first integration scheme combined with Al2O3 encapsulation via atomic layer deposition. All the devices show a statistically significant reduction in the Dirac point position, V cnp , from around +47 V to between −5 and 5 V (on 285 nm SiO2), while maintaining the mobility values. The data and methods presented are relevant for further integration of graphene devices, specifically sensors, at the back-end-of-line of a standard CMOS flow.

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