Bottom-Up Grown 2D InSb Nanostructures

Journal article (2019)

Authors

S. Gazibegovic QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , Eindhoven University of Technology, QuTech Advanced Research Centre, Kavli institute of nanoscience Delft
G.H.A. Badawy Eindhoven University of Technology
Thijs L.J. Buckers Eindhoven University of Technology
P. Leubner Eindhoven University of Technology, QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
J. Shen QuTech Advanced Research Centre, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , Kavli institute of nanoscience Delft
F.K. de Vries Kavli institute of nanoscience Delft, QRD/Goswami Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre
S. Kölling Eindhoven University of Technology
Leo P. Kouwenhoven Microsoft Quantum Lab Delft, QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
M. A. Verheijen Eindhoven University of Technology
E.P.A.M. Bakkers Eindhoven University of Technology, Kavli institute of nanoscience Delft, QN/Bakkers Lab , QuTech Advanced Research Centre
Research Group
QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)
More Info
expand_more

Published Date

2019

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract


Low-dimensional high-quality InSb materials are promising candidates for next-generation quantum devices due to the high carrier mobility, low effective mass, and large g-factor of the heavy element compound InSb. Various quantum phenomena are demonstrated in InSb 2D electron gases and nanowires. A combination of the best features of these two systems (pristine nanoscale and flexible design) is desirable to realize, e.g., the multiterminal topological Josephson device. Here, controlled growth of 2D nanostructures, nanoflakes, on an InSb platform is demonstrated. An assembly of nanoflakes with various dimensions and morphologies, thinner than the Bohr radius of InSb, are fabricated. Importantly, the growth of either nanowires or nanoflakes can be enforced experimentally by setting growth and substrate design parameters properly. Hall bar measurements on the nanostructures yield mobilities up to ≈20 000 cm
2
V
−1
s
−1
and detect quantum Hall plateaus. This allows to see the system as a viable nanoscale 2D platform for future quantum devices.