Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers

Journal article (2019)

Authors

Florian Vigneau Université Grenoble Alpes
Raisei Mizokuchi Université Grenoble Alpes
Silvano De Franceschi Université Grenoble Alpes
Dante Colao Zanuz Université Grenoble Alpes
Xuhai Huang University of Pittsburgh
Susheng Tan University of Pittsburgh
Romain Maurand Université Grenoble Alpes
Sergey M. Frolov University of Pittsburgh
A. Sammak Kavli institute of nanoscience Delft, Business Development
G. Scappucci QCD/Scappucci Lab - QuTech Advanced Research Centre , Kavli institute of nanoscience Delft
Francois Lefloch Université Grenoble Alpes
Department
Business Development
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Published Date

2019

Language

English

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Department

Business Development

Abstract

Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements. Transmission electron microscopy reveals the diffusion of Ge into the Al contacts, whereas no Al is detected in the Ge channel.