Potential and limitations of CsBi3I10as a photovoltaic material

Journal article (2020)

Authors

Paz Sebastia-Luna Universidad de Valencia (ICMol)
M.C. Gelvez Rueda ChemE/Opto-electronic Materials - AS
Chris Dreessen Universidad de Valencia (ICMol)
Michele Sessolo Universidad de Valencia (ICMol)
F.C. Grozema ChemE/Opto-electronic Materials - AS
Francisco Palazon Universidad de Valencia (ICMol)
Henk J. Bolink Universidad de Valencia (ICMol)
Research Group
ChemE/Opto-electronic Materials (AS) (TU Delft)
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Published Date

2020

Language

English

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Opto-electronic Materials

Abstract

Herein we demonstrate the dry synthesis of CsBi3I10 both as a free-standing material and in the form of homogeneous thin films, deposited by thermal vacuum deposition. Chemical and optical characterization shows high thermal stability, phase purity, and photoluminescence centered at 700 nm, corresponding to a bandgap of 1.77 eV. These characteristics make CsBi3I10 a promising low-toxicity material for wide bandgap photovoltaics. Nevertheless, the performance of this material as a semiconductor in solar cells remains rather limited, which can be at least partially ascribed to a low charge carrier mobility, as determined from pulsed-radiolysis time-resolved microwave conductivity. Further developments should focus on understanding and overcoming the current limitations in charge mobility, possibly by compositional tuning through doping and/or alloying, as well as optimizing the thin film morphology which may be another limiting factor. This journal is

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