Lightly strained germanium quantum wells with hole mobility exceeding one million

Journal article (2022)

Authors

M. Lodari Kavli institute of nanoscience Delft, QCD/Scappucci Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre
O. Kong University of New South Wales
M. Rendell University of New South Wales
A. Tosato QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QCD/Scappucci Lab - QuTech Advanced Research Centre
A. Sammak BUS/TNO STAFF - QuTech Advanced Research Centre
M. Veldhorst QuTech Advanced Research Centre, QN/Veldhorst Lab - AS , Kavli institute of nanoscience Delft
A. R. Hamilton University of New South Wales
G. Scappucci QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QCD/Scappucci Lab - QuTech Advanced Research Centre
Research Group
QCD/Scappucci Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2022 M. Lodari, O. Kong, M. Rendell, A. Tosato, A. Sammak, M. Veldhorst, A. R. Hamilton, G. Scappucci
DOI: https://doi.org/10.1063/5.0083161
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Published Date

2022

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Scappucci Lab

Abstract

We demonstrate that a lightly strained germanium channel (ϵ / / = - 0.41 %) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1 × 10 6 cm2/Vs and percolation density less than 5 × 10 10 cm-2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (0.068 m e) defines lightly strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.

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