High-quality p+n Ge diodes selectively grown on Si with a sub-300nm transition region

Sammak, Amir; de Boer, Wiebe; Qi, L.; Nanver, L. K.

High-quality p+n Ge diodes selectively grown on Si with a sub-300nm transition region

Conference paper (2011)

Authors

Amir Sammak Electronic Components, Technology and Materials

Wiebe de Boer Electronic Components, Technology and Materials, Old - EWI Sect. ECTM

L. Qi Electronic Components, Technology and Materials

L. K. Nanver Electronic Components, Technology and Materials

Research Group

Electronic Components, Technology and Materials

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Published Date

2011

Language

English

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Research Group

Electronic Components, Technology and Materials

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