Pure boron chemical vapor deposited layers; A new material for silicon device processing

Nanver, LK; Scholtes, T.L.M.; Buisman, K.; Sarubbi, F; de Boer, Wiebe; Lorito, G.; Sakic, A.; Milosavljević, S.; Mok Kai Rine, C.; Shi, Lei; Nihtianova, Stoyan

Pure boron chemical vapor deposited layers; A new material for silicon device processing

Conference paper (2010)

Authors

LK Nanver Electronic Components, Technology and Materials -

T.L.M. Scholtes Electronic Components, Technology and Materials -

K. Buisman Old - EWI Sect. Electronics

F Sarubbi Electronic Components, Technology and Materials -

Wiebe de Boer Electronic Components, Technology and Materials -

G. Lorito Electronic Components, Technology and Materials -

A. Sakic Electronic Components, Technology and Materials -

S. Milosavljević Electronic Components, Technology and Materials -

C. Mok Kai Rine Electronic Components, Technology and Materials -

Lei Shi Electronic Instrumentation -

Stoyan Nihtianova Electronic Instrumentation -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

To reference this document use:

http://resolver.tudelft.nl/uuid:82d1e315-6631-4513-ac8e-9b69b8d7f209

More Info

expand_more

Published Date

2010

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials