An energy-efficient capacitively biased diode-based temperature sensor in 55-nm CMOS

Journal article (2021)

Authors

Z. Tang Zhejiang University, Electronic Instrumentation - EEMCS , Eindhoven University of Technology
Yun Fang Zhejiang University
Xiao Peng Yu Zhejiang University
Nick Nianxiong Tan Zhejiang University
Zheng Shi Zhejiang University
Pieter Harpe Eindhoven University of Technology
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2021 Z. Tang, Yun Fang, Xiao Peng Yu, Nick Nianxiong Tan, Zheng Shi, Pieter Harpe
DOI: https://doi.org/10.1109/LSSC.2021.3124471
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Published Date

2021

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This work presents an energy-efficient diode-based CMOS temperature sensor. It is based on the capacitively biased diode (CBD) working principle and can operate with a 1-V supply voltage. Instead of using a separate CBD front-end and ADC, a new architecture is proposed in which the CBD front-end is directly embedded into the 1st stage of a 1-bit 2nd-order switched-capacitor ΣΔ-ADC, thereby improving both energy efficiency and accuracy. The circuit was fabricated in a standard 55-nm CMOS process and occupies an active area of 0.021 mm2. The measured inaccuracy is ±0.6 °C (3σ) from -55 °C to 125 °C after a 1-point calibration. Furthermore, it consumes 2.2 μW and achieves a resolution of 15 mK in a conversion time of 6.4 ms, which corresponds to a competitive resolution FoM of 3.2 pJ·K2

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