Properties of (Nb0.35, Ti0.15)-xN1-x thin films deposited on silicon wafers at ambient substrate temperature.

Iossad, N; Mijiritskii, AV; Rodatis, VV; van der Pers, N.M.; Jackson, BD; Gao, JR; Polyakov, SN; Dmitriev, PN; Klapwijk, T.M.

Properties of (Nb0.35, Ti0.15)-xN1-x thin films deposited on silicon wafers at ambient substrate temperature.

Journal article (2000)

Authors

N Iossad QN/Fysics of NanoElectronics

AV Mijiritskii External organisation

VV Rodatis External organisation

N.M. van der Pers OLD Virtual Materials and Mechanics

BD Jackson QN/Fysics of NanoElectronics

JR Gao QN/Fysics of NanoElectronics

SN Polyakov External organisation

PN Dmitriev External organisation

T.M. Klapwijk QN/Fysics of NanoElectronics

Research Group

QN/Fysics of NanoElectronics

To reference this document use:

http://resolver.tudelft.nl/uuid:56ba4d50-52b2-42b5-883e-46cdda5a278a

More Info

expand_more

Published Date

2000

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

QN/Fysics of NanoElectronics