A High-Mobility Hole Bilayer in a Germanium Double Quantum Well

Journal article (2022)

Authors

A. Tosato QCD/Scappucci Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre, Kavli institute of nanoscience Delft
B.M. Ferrari Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, QCD/Scappucci Lab - QuTech Advanced Research Centre
A. Sammak QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, BUS/TNO STAFF - QuTech Advanced Research Centre
A. R. Hamilton University of New South Wales
M. Veldhorst Kavli institute of nanoscience Delft, QN/Veldhorst Lab - AS , QuTech Advanced Research Centre
Michele Virgilio University of Pisa
G. Scappucci Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, QCD/Scappucci Lab - QuTech Advanced Research Centre
Research Group
QCD/Scappucci Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2022 A. Tosato, B.M. Ferrari, A. Sammak, Alexander R. Hamilton, M. Veldhorst, Michele Virgilio, G. Scappucci
DOI: https://doi.org/10.1002/qute.202100167
More Info
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Published Date

2022

Language

English

Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Scappucci Lab

Abstract

A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger-Poisson simulations.