Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

Journal article (2021)

Authors

Raymond J.E. Hueting University of Twente
H. De Vries University of Twente
S. Dutta Dynamics of Micro and Nano Systems - Mechanical, Maritime and Materials Engineering
A. J. Annema University of Twente
Research Group
Dynamics of Micro and Nano Systems (Mechanical, Maritime and Materials Engineering) (TU Delft)
Copyright: © 2021 R. J.E. Hueting, H. De Vries, S. Dutta, A. J. Annema
DOI: https://doi.org/10.1109/LED.2021.3087362
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Published Date

2021

Language

English

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Faculty

Mechanical, Maritime and Materials Engineering

Department

Precision and Microsystems Engineering

Research Group

Dynamics of Micro and Nano Systems

Abstract

The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption low-voltage ( \leq 15\text{V} ) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes.

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