Tunable single hole regime of a silicon field effect transistor in standard CMOS technology

Journal article (2015)

Authors

M Turchetti Istituto di Fotonica e Nanotecnologie, Phelma, Grenoble
Harald Homulle OLD QCD/Charbon Lab
F. Sebastiano Electronic Instrumentation - EEMCS
G Ferrari Politecnico di Milano
E. Charbon-Iwasaki-Charbon (OLD)Applied Quantum Architectures
E. Prati Istituto di Fotonica e Nanotecnologie
Research Group
OLD QCD/Charbon Lab
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Published Date

11-12-2015

Language

English

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Research Group

OLD QCD/Charbon Lab

Abstract

The electrical properties of a Single Hole Field Effect Transistor (SH-FET) based on CMOS technology are analyzed in a cryogenic environment. Few electron–hole Coulomb diamonds are observed using quantum transport spectroscopy measurements, down to the limit of single hole transport. Controlling the hole filling of the SH-FET is made possible by biasing the top gate, while the bulk contact is employed as a back gate that tunes the hole state coupling with the contacts and their distance from the interface. We compare the cryogenic Coulomb blockade regime with the room temperature regime, where the device operation is similar to that of a standard p-MOSFET.