Ultra-thin ALD MGO membranes as mems transmission dynodes in a timed photon counter

Conference paper (2017)

Authors

V. Prodanovic Electronic Components, Technology and Materials -

H.W. Chan Electronic Components, Technology and Materials -

Anil U. Mane Argonne National Laboratory

Jeffrey W. Elam Argonne National Laboratory

H. van der Graaf RST/Neutron and Positron Methods in Materials -

Pasqualina M Sarro Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

Silicon Films Substrates Surface treatment Micromechanical devices Silicon compounds Meurement by laser beam

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Published Date

2017

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this work we demonstrate how a novel single free electron detector 'Timed Photon Counter' (TiPC) may benefit from ultra-thin MgO transmission dynodes (tynodes). These membranes are fabricated through MEMS process technologies, with atomic layer deposition (ALD) as the most apt technique for growing films of good quality, with excellent control over thicknesses and extremely low surface roughness. Large area arrays of ultra-thin (5-25 nm) free-standing MgO membranes are fabricated and characterized to determine the optimal thickness for application of ALD MgO in TiPC. Supremacy of MgO over other materials previously considered, such as SiN, Al₂O₃, SiC, Si is verified. The exceptional mechanical (low stress in particular, -200 MPa), chemical and electrical properties of MgO make this material a very attractive candidate for numerous MEMS applications, as the MEMS transmission dynodes in the timed photon counter.

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