Properties of (Nb0.35, Ti0.15)xNi1-x thin films deposited on silicon wafers at ambient substrate temperature.

Iossad, N; Mijiritskii, AV; Roddatis, VV; van der Pers, N.M.; Jackson, BD; Gao, JR; Polyakov, SN; Dmitriev, PN; Klapwijk, T.M.

Properties of (Nb0.35, Ti0.15)xNi1-x thin films deposited on silicon wafers at ambient substrate temperature.

Journal article (2000)

Authors

N Iossad QN/Fysics of NanoElectronics

AV Mijiritskii External organisation

VV Roddatis External organisation

N.M. van der Pers OLD Virtual Materials and Mechanics

BD Jackson QN/Fysics of NanoElectronics

JR Gao QN/Fysics of NanoElectronics

SN Polyakov External organisation

PN Dmitriev External organisation

T.M. Klapwijk QN/Fysics of NanoElectronics

Research Group

QN/Fysics of NanoElectronics

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Published Date

2000

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Research Group

QN/Fysics of NanoElectronics