Superconducting Transition Metal Nitride films for THz SIS Mixers.

Iossad, N; Roddatis, VV; Polyakov, SN; Varlashkin, AV; Jackson, BD; Dmitriev, PN; Gao, JR; Klapwijk, T.M.

Superconducting Transition Metal Nitride films for THz SIS Mixers.

Conference paper (2001)

Authors

N Iossad QN/Fysics of NanoElectronics

VV Roddatis External organisation

SN Polyakov External organisation

AV Varlashkin External organisation

BD Jackson QN/Fysics of NanoElectronics

PN Dmitriev External organisation

JR Gao QN/Fysics of NanoElectronics

T.M. Klapwijk QN/Fysics of NanoElectronics

Research Group

QN/Fysics of NanoElectronics

To reference this document use:

http://resolver.tudelft.nl/uuid:0863cf85-d10e-4a58-8037-3cff5734aaec

More Info

expand_more

Published Date

2001

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

QN/Fysics of NanoElectronics