Avalanche-mode Si light-emitting transistor for narrow-band emission near 760 nm

Journal article (2022)

Authors

S. Dutta Dynamics of Micro and Nano Systems - Mechanical, Maritime and Materials Engineering
R. J.E. Hueting University of Twente
Gerard J. Verbiest Dynamics of Micro and Nano Systems - Mechanical, Maritime and Materials Engineering
Research Group
Dynamics of Micro and Nano Systems (Mechanical, Maritime and Materials Engineering) (TU Delft)
Copyright: © 2022 S. Dutta, Raymond J.E. Hueting, G.J. Verbiest
DOI: https://doi.org/10.1109/LED.2022.3200349
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Published Date

2022

Language

English

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Faculty

Mechanical, Maritime and Materials Engineering

Department

Precision and Microsystems Engineering

Research Group

Dynamics of Micro and Nano Systems

Abstract

We report an avalanche-mode light-emitting transistor (AMLET) in silicon (Si), based on a lateral bipolar junction, which emits light near 760 nm optical wavelength with a record low bandwidth of 38 nm. The AMLET, designed in a CMOS-compatible silicon-on-insulator (SOI) photonics platform, is optically confined within a 0.21 ∼\μ m thick SOI layer, which forms a Fabry-Pérot (FP) resonator perpendicular to the Si surface. Light is emitted from the reverse biased emitter-base junction via phonon-assisted hot carrier recombination and, additionally, minority carriers are injected via the forward-biased Base-Collector junction. The combination of injection from collector terminal through a narrow base and FP optical resonance, yields a high optical power efficiency of 4.3\× 10-6 at V BC=0.8 V and V EB=10 V. Our work opens new possibilities in spectral-engineering of Si light-emitters, which could boost performance of all-Si optical interconnects and sensors.

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