Scaling up a horizontal HVP reactor

The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

Damage after annealing and aging at room temperature of platinized silicon substrates

Complementary study of defects in GaN by photo-etching and TEM

Structure and Morphology of Epitaxial PbZrO3 Films Grown by Metal Organic Chemical Vapor Deposition

Photoluminescence study of piezoelectric polarization in strained AlxGa1-xN/GaN single quantum wells.

Selective photo-etching and TEM study of defects in hetero-epitaxial GaN.