MF

MN Fujii

2 records found

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at ...
We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a g ...