Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

Bermundo, J.P.; Ishikawa, Y; Fujii, MN; van der Zwan, M.; Nonaka, T; Ishihara, R.; Uraoka, Y

Excimer laser annealing of amorphous oxide thin-film transistors passivated with hybrid passivation layer

Conference paper (2014)

Authors

J.P. Bermundo Nara Institute of Science and Technology

Y Ishikawa Nara Institute of Science and Technology

MN Fujii Nara Institute of Science and Technology

M. van der Zwan Electronic Components, Technology and Materials -

T Nonaka AZ Electronic Materials Manufacturing Japan

R. Ishihara Quantum Integration Technology

Y Uraoka Nara Institute of Science and Technology

Research Group

Electronic Components, Technology and Materials () (TU Delft)

Passivation Excimer laser annealing Oxide semiconductors Polysilsesquioxane

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Published Date

2014

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

We performed excimer laser annealing on passivated amorphous oxide semiconductor thin-film transistors such as amorphous InZnO and InGaZnO. These thin-film transistors were passivated by a hybrid passivation known as polysilsesquioxane. We show that excimer laser annealing is a good low temperature annealing method for high performance amorphous oxide thin-film transistors. © 2014 ITE and SID.