Atomic layer deposition (ALD) is known for its unparalleled control over layer thickness and 3D conformality and could be the future technique of choice to tailor the pore size of ceramic nanofiltration membranes. However, a major challenge in tuning and functionalizing a multichannel ceramic membrane is posed by its large internal pore volume, which needs to be evacuated during ALD cycling. This may require significant energy and processing time. This study presents a new reactor design, operating at atmospheric pressure, that is able to deposit thin layers in the pores of ceramic membranes. In this design, the reactor wall is formed by the industrial tubular ceramic membrane itself, and carrier gas flows are employed to transport the precursor and co-reactant vapors to the reactive surface groups present on the membrane surface. The layer growth for atmospheric-pressure ALD in this case proceeds similarly to that for state-of-the-art vacuum-based ALD. Moreover, for membrane preparation, this new reactor design has three advantages: (i) monolayers are deposited only at the outer pore mouths rather than in the entire bulk of the porous membrane substrate, resulting in reduced flow resistances for liquid permeation; (ii) an in-line gas permeation method was developed to follow the layer growth in the pores during the deposition process, allowing more precise control over the finished membrane; and (iii) expensive vacuum components and cleanroom environment are eliminated. This opens up a new avenue for ceramic membrane development with nano-scale precision using ALD at atmospheric pressure.

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.