Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world’s most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.

We show enhanced single-photon emission from artificial atoms in silicon by coupling them to cavities with high quality factors and small mode volumes, thus enabling enhanced light-matter interactions which are crucial for quantum technologies.

Hybrid integration provides an important avenue for incorporating atom-like solid-state single-photon emitters into photonic platforms that possess no optically-active transitions. Hexagonal boron nitride (hBN) is particularly interesting quantum emitter for hybrid integration, as it provides a route for room-temperature quantum photonic technologies, coupled with its robustness and straightforward activation. Despite the recent progress of integrating hBN emitters in photonic waveguides, a deterministic, site-controlled process remains elusive. Here, the integration of selected hBN emitter in silicon nitride waveguide is demonstrated. A small misalignment angle of 4° is shown between the emission-dipole orientation and the waveguide propagation direction. The integrated emitter maintains high single-photon purity despite subsequent encapsulation and nanofabrication steps, delivering quantum light with zero delay second order correlation function (Formula presented.). The results provide an important step toward deterministic, large scale, quantum photonic circuits at room temperature using atom-like single-photon emitters.

Two decades after their demonstration, superconducting nanowire single-photon detectors (SNSPDs) have become indispensable tools for quantum photonics as well as for many other photon-starved applications. This invention has not only led to a burgeoning academic field with a wide range of applications but also triggered industrial efforts. Current state-of-the-art SNSPDs combine near-unity detection efficiency over a wide spectral range, low dark counts, short dead times, and picosecond time resolution. The present perspective discusses important milestones and progress of SNSPDs research, emerging applications, and future challenges and gives an outlook on technological developments required to bring SNSPDs to the next level: a photon-counting, fast time-tagging imaging, and multi-pixel technology that is also compatible with quantum photonic integrated circuits.

We use dispersion engineering to control the signal propagation speed in the feed lines of superconducting single-photon detectors. Using this technique, we demonstrate time-division-multiplexing of two-pixel detectors connected with a slow-RF transmission line, all realized using planar geometry requiring a single lithographic step. Through studying the arrival time of detection events in each pixel vs the fabricated slow-RF coplanar waveguide length, we extract a delay of 1.7 ps per 1 μm of propagation, corresponding to detection signal speeds of ∼0.0019c. Our results open an important avenue to explore the rich ideas of dispersion engineering and metamaterials for superconducting detector applications.

Semiconductor quantum dots are crucial parts of the photonic quantum technology toolbox because they show excellent single-photon emission properties in addition to their potential as solid-state qubits. Recently, there has been an increasing effort to deterministically integrate single semiconductor quantum dots into complex photonic circuits. Despite rapid progress in the field, it remains challenging to manipulate the optical properties of waveguide-integrated quantum emitters in a deterministic, reversible, and nonintrusive manner. Here we demonstrate a new class of hybrid quantum photonic circuits combining III-V semiconductors, silicon nitride, and piezoelectric crystals. Using a combination of bottom-up, top-down, and nanomanipulation techniques, we realize strain tuning of a selected, waveguide-integrated, quantum emitter and a planar integrated optical resonator. Our findings are an important step toward realizing reconfigurable quantum-integrated photonics, with full control over the quantum sources and the photonic circuit.