Through a density functional theory-driven survey, a comprehensive investigation of two-dimensional (2D) Janus aluminum-based monochalcogenides (Al₂XY with X/Y = S, Se, and Te) has been performed within this study. To begin with, it is established that the examined phase, in which the Al-atoms are located at the two inner planes while the (S, Se, and Te)-atoms occupy the two outer planes in the unit cell, are energetically, mechanically, dynamically, and thermally stable. To address the electronic and optical properties, the hybrid function HSE06 has been employed. It is at first revealed that all three monolayers display a semiconducting nature with an indirect band gap ranging from 1.82 to 2.79 eV with a refractive index greater than 1.5, which implies that they would be transparent materials. Furthermore, the monolayers feature strong absorption spectra of around 10⁵ cm⁻¹ within the visible and ultraviolet regions, suggesting their potential use in optoelectronic devices. Concerning the photocatalytic performance, the conduction band-edge positions straddle the hydrogen evolution reaction redox level. Also, it is observed that the computed Gibbs free energy is around 1.15 eV, which is lower and comparable to some recently reported 2D-based Janus monolayers. Additionally, the thermoelectric properties are further investigated and found to offer a large thermal power as well as a high figure of merit (ZT) around 1.03. The aforementioned results strongly suggest that the 2D Janus Al-based monochalcogenide exhibits suitable characteristics as a potential material for high-performance optoelectronic and thermoelectric applications.

Computational design of new two-dimensional materials constitutes an effective and promising approach in the development and exploration of a wide range of emerging applications such as optoelectronics, photocatalysis, energy storage, and conversion. Within the framework of this work, we systematically investigated for the first time, the structural, stability, optoelectronic, and pho-tocatalytic properties of new predicted Al(Ga, In)STe monolayers derived from Janus Aluminium mono-chalcogenides through Density Functional Theory and Ab-Initio molecular dynamic simulations. After a full optimization of both struc-tures, their dynamics and thermal stability was confirmed through the calculations of phonon spectrum and ab-initio molecular dynamics at a chosen temperature, respectively. Subsequently, the electronic and optical properties were explored and findings revealed that both monolayers exhibit a semiconducting characteristic with a direct and indirect electronic band gap of about 2.23 and 2.69 eV using HSE06 hybrid functional for AlGaSTe and AlInSTe monolayers, re-spectively. Furthermore, the optical absorption indicates a strong absorption of light in the range between 3 and 18 eV. More noticeably, Both Janus monolayers considered exhibiting a promising optical absorption in the visible wavelength region with an absorption coefficient greater than 10⁵ cm⁻¹. In addition, the photocatalytic properties of these structures were investigated by plotting the band edge positions straddle the reduction potential of H₂ and the oxidation potential H₂O. Based on our results, we conclude that both monolayers offer good thermodynamic stability allowing them to be processed experimentally and can be used as very appropriate candidates for optoelectronics and photocatalytic applications.