Microstructure analysis of n-doped ¿c-SiOx:H reflector layers and their implementation in stable a-Si:H p-i-n junctions

Babal, P.; Blanker, J; Vasudevan, R.A.; Smets, A.H.M.; Zeman, Miroslav

Microstructure analysis of n-doped ¿c-SiOx:H reflector layers and their implementation in stable a-Si:H p-i-n junctions

Conference paper (2012)

Authors

P. Babal Photovoltaic Materials and Devices -

J Blanker External organisation

R.A. Vasudevan Photovoltaic Materials and Devices -

A.H.M. Smets Photovoltaic Materials and Devices -

Miroslav Zeman Photovoltaic Materials and Devices -

Research Group

Photovoltaic Materials and Devices () (TU Delft)

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Published Date

2012

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices