Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.

Journal article (2000)

Authors

ZX Jiang External organisation

P.F.A. Alkemade Old - sect Electronic Materials (NS/EM)

CH Tung External organisation

JLF Wang External organisation

Research Group

Old - sect Electronic Materials (NS/EM)

To reference this document use:

http://resolver.tudelft.nl/uuid:f1db5eb9-9283-4af6-a0ac-04d8dfbf2b58

More Info

expand_more

Published Date

2000

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

Old - sect Electronic Materials (NS/EM)