Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.

Jiang, ZX; Alkemade, P. F.A.; Tung, CH; Wang, JLF

Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.

Journal article (2000)

Authors

ZX Jiang External organisation

P. F.A. Alkemade Old - sect Electronic Materials (NS/EM)

CH Tung External organisation

JLF Wang External organisation

Research Group

Old - sect Electronic Materials (NS/EM)

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Published Date

2000

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Research Group

Old - sect Electronic Materials (NS/EM)

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