A GaN-based Power Factor Correction Converter

for Electric Vehicle Charging

Master thesis (2019)

Authors

D. Lyu Electrical Engineering, Mathematics and Computer Science

Contributors

Z. Qin DC systems, Energy conversion & Storage - EEMCS (mentor)
Stefan Raaijmakers ABB B.V. EV Charging Infrastructure (mentor)
G.R. Chandra Mouli DC systems, Energy conversion & Storage - EEMCS (graduation committee member)
P. Bauer DC systems, Energy conversion & Storage - EEMCS (graduation committee member)
A.H.M. Smets Photovoltaic Materials and Devices - EEMCS (graduation committee member)
Faculty
Electrical Engineering, Mathematics and Computer Science, Electrical Engineering, Mathematics and Computer Science
Copyright: © 2019 Dingsihao Lyu
More Info
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Published Date

21-08-2019

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Abstract

Because of its superior conduction and switching performance, and falling price, Gallium Nitride (GaN) power semiconductor device is expected to bring improvements to the power electronics system, including higher efficiency and higher power density. How will the new semiconductor device benefit the rapidly growing Electric Vehicle (EV) charging application, where high efficiency, high power density are two of the most important design requirements? In order to verify the match between the new semiconductors and the EV charger application, hardware demonstration needs to be carried out. In this thesis project, the design of a GaN-based, high switching frequency, single phase, 2KW PFC converter for EV charging will be introduced. The operation principle and control of the converter will be explained, and the hardware demonstration results will be shown. The testing results prove the high-efficiency, high-frequency abilities of the new technology.

Files

DingsihaoLyu_ThesisReport.pdf
(pdf | 13.2 Mb)
- Embargo expired in 21-08-2021
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