A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors

Conference paper (2016)

Authors

S. Vollebregt Electronic Components, Technology and Materials - EEMCS
B. Alfano ENEA UTTP-MDB, Università degli Studi di Napoli Federico II
F. Ricciardella Italian Institute of Technology
A.J.M. Giesbers Philips Innovation Services
Y. Hagendoorn Electronic Components, Technology and Materials - EEMCS
H.W. van Zeijl EKL Processing - EEMCS
T. Polichetti ENEA UTTP-MDB
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2016 S. Vollebregt, B. Alfano, F. Ricciardella, A.J.M. Giesbers, Y. Hagendoorn, H.W. van Zeijl, T Polichetti, Pasqualina M Sarro
DOI: https://doi.org/10.1109/MEMSYS.2016.7421546
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Published Date

2016-1

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement of the graphene on the underlying SiO2. Moreover, pre-patterning the Mo layer allows customizable graphene geometries to be directly obtained, something that has never been achieved before. This process is extremely suitable for the large-scale fabrication of MEMS/NEMS sensors, especially those benefitting from specific properties of graphene, such as gas sensing.

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