A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM

Pan, S.; Jiang, H.; Makinwa, K.A.A.

doi:10.23919/vlsic.2017.8008557

A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM

Conference paper (2017)

Authors

S. Pan Electronic Instrumentation -

H. Jiang Electronic Instrumentation -

K.A.A. Makinwa Microelectronics

Research Group

Electronic Instrumentation () (TU Delft)

DOI: https://doi.org/10.23919/vlsic.2017.8008557

Energy efficiency Temperature measurement Temperature sensors Energy resolution Resistors Bridge circuits Sensitivity

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Published Date

2017

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ·K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution (160μK in 10ms) and a low supply-voltage sensitivity (< 20mK/V at room temperature).

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