Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoOxpassivating contacts solar cells

Conference paper (2020)

Authors

L. Mazzarella Photovoltaic Materials and Devices - EEMCS
A. Alcañiz Moya Photovoltaic Materials and Devices - EEMCS
Eliora Kawa Student
P.A. Procel Moya Photovoltaic Materials and Devices - EEMCS
Y. Zhao Photovoltaic Materials and Devices - EEMCS
C. Han Photovoltaic Materials and Devices - EEMCS
G. Yang Photovoltaic Materials and Devices - EEMCS
M. Zeman Electrical Sustainable Energy
O. Isabella Photovoltaic Materials and Devices - EEMCS
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2020 L. Mazzarella, A. Alcañiz Moya, Eliora Kawa, P.A. Procel Moya, Y. Zhao, C. Han, G. Yang, M. Zeman, O. Isabella
DOI: https://doi.org/10.1109/PVSC45281.2020.9300968
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Published Date

2020

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Electrical simulations show that the dipole formed at (i)a-Si:H/MoOx interface can explain electrical performance degradation. We experimentally manipulate this interface by a plasma treatment (PT) to mitigate the dipole strength without harming the optical response. The optimal PT + MoOx stack results in strongly improved electrical parameters as compared to the one featuring only MoOx and to the silicon heterojunction reference cell. Optical simulations and experimentally measured currents suggest that the additional PT is responsible of very limited parasitic absorption overcompensated by the thinner MoOx used (3.5 nm) and by the lower losses in the (i)a-Si:H layer underneath.

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