A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

Ishihara, R.; Glazer, A; Metselaar, JW; Beenakker, C.I.M.; Stolyarova, S; Nemirovsky, Y; Raab, Y; Rusian, P; Dorfan, M; Lavi, B; Leizerson, I; Kishinevsky, A; van Andel, Y; Cao, X

A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

Journal article (2006)

Authors

R. Ishihara Electronic Components, Technology and Materials -

A Glazer External organisation

JW Metselaar Electronic Components, Technology and Materials -

C.I.M. Beenakker Electronic Components, Technology and Materials -

S Stolyarova External organisation

Y Nemirovsky External organisation

Y Raab External organisation

P Rusian External organisation

M Dorfan External organisation

B Lavi External organisation

I Leizerson External organisation

A Kishinevsky External organisation

Y van Andel Electronic Components, Technology and Materials -

X Cao External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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Published Date

2006

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials