A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain

Kumaran, A.K.; Pashaeifar, M.; Nemati, Hossein Mashad; de Vreede, L.C.N.; Alavi, S.M.

doi:10.1109/RFIC54547.2023.10186161

A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain

Conference paper (2023)

Authors

A.K. Kumaran Electronics -

M. Pashaeifar Electronics -

Hossein Mashad Nemati Huawei Technologies

L.C.N. de Vreede Electronics -

S.M. Alavi Electronics -

Research Group

Electronics () (TU Delft)

DOI: https://doi.org/10.1109/RFIC54547.2023.10186161

Doherty Compact 3-stage Power amplifier Lumped components Millimeter wave Norton transformation

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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

This paper presents a 40nm CMOS mm-wave 3-way Doherty power amplifier (PA) suitable for 5G mm-wave transmitters. It features a bandwidth-enhanced technique using a compact single-supply balun-first 3-way Doherty combiner. The realized front-end with a core area of 0.77 mm2delivers a peak power/gain of more than 20 dBm/16 dB and a drain efficiency (DE) of better than 15 %/22 %/33 % at 9.5 dB/6 dB/0 dB power back-off across a 24-to-30 GHz band. At 26 GHz, it achieves an EVM/ACLR of -23.5 dB/-29.5 dBc for an 800MHz 64-OFDM signal with 9.8 dBm average output power and a 15 % average DE.

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